Abstract：Based on X-ray photoelectron spectroscopy technique, the National Institute of Metrology (NIM) of China developed an accurate analytical method and participated in the CCQM-32 international key comparison on thickness (less than 10 nm) measurement of ultrathin silicon oxides on silicon wafer.According to the published results of CCQM-K32, the NIM results with the expanded uncertainty of 4.6％～7.0% are agreed with the key comparison reference values and the degree of equivalence is gained.
［1］van der Marel C, Verheijen M A, Tamminga Y, et al. Thickness and composition of ultrathin SiO2 layers on Si ［J］.Journal of vacuum science & technology A: vacuum, surfaces, and films, 2004, 22(4):1572-1578.
［2］Briggs D, Grant J T. Surface analysis by Auger and X-ray photoelectron spectroscopy［M］.Manchester:IM Publications and Surface Spectra Ltd,2003.
［3］Baer D R. Improving surface-analysis methods for characterization of advanced materials by development of standards, reference data, and interlaboratory comparisons ［J］. Surface and Interface Analysis, 2007, 39(4): 283-293.
［4］王海,程斌,宋小平,等.Fe-Ni合金薄膜组成准确测量的XPS研究 ［J］. 稀有金属,2010,34(3):431-435.
［5］王海,宋小平,程斌,等. Fe-Ni合金薄膜组成表面分析测量国际关键比对CCQM-K67 ［J］. 计量学报,2012,33(5):463-466.
［6］Seah M P. Intercomparison of silicon dioxide thickness measurements made by multiple techniques: the route to accuracy ［J］.Journal of vacuum science & technology A: vacuum, surfaces, and films, 2004, 22(4): 1564-1571.
［7］Seah M P, Spencer S J, Bensebaa F, et al. Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: results of a CCQM pilot study ［J］.Surface and Interface Analysis,2004, 36(9): 1269-1303.
［8］Seah M P. CCQM-K32 key comparison and P84 pilot study: amount of silicon oxide as a thickness of SiO2 on Si ［R］. NPL Report AS 27,2008.
［9］Seah M P, Unger W E S, Wang H, et al. Ultra-thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on Si ［J］. Surface and Interface Analysis,2009, 41(5): 430-439.
［10］Seah M P, Spencer S J. Ultrathin SiO2 on Si I: quantifying and removing carbonaceous contamination ［J］.Journal of vacuum science & technology A: vacuum, surfaces, and films,2003, 21(2): 345-352.
［11］Seah M P, White R. Ultrathin SiO2 on Si III: mapping the layer thickness efficiently by XPS ［J］.Surface and Interface Analysis,2002, 33(12): 960-963.
［12］Seah M P, Spencer S J. Ultrathin SiO2 on Si II: issues in quantification of the oxide thickness ［J］.Surface and Interface Analysis,2002, 33(8): 640-652.
［13］刘芬,赵志娟,邱丽美,等. 硅片上超薄氧化硅厚度XPS测量中的样品几何取向研究 ［J］. 科学研究月刊,2007,(3):87-89.
［14］Seah M P, Spencer S J. Ultrathin SiO2 on Si III: intensity measurement in XPS and deduced thickness linearity ［J］.Surface and Interface Analysis,2003, 35(6): 515-524.
［15］Seah M P. Ultrathin SiO2 on Si VI: evaluation of uncertainties in thickness measurement using XPS ［J］.Surface and Interface Analysis, 2005, 37(3): 300-309.
［16］Seah M P, Spencer S J. Ultrathin SiO2 on Si VII: angular accuracy in XPS and an accurate attenuation length ［J］.Surface and Interface Analysis,2005, 37(9): 731-736.
2013, Vol. 34 
