芯片研制用微纳米尺度温度测量方法及其展望

doi:10.3969/j.issn.1000-1158.2024.09.03

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摘要微纳米尺度温度测量在芯片的设计、制造和封装过程中至关重要,旨在提供微小尺度区域的高精度温度信息,反映出芯片的发热情况。然而现有的测温技术无法满足芯片性能日益提升的需求,例如以热电偶等为代表的接触式测温具有较高的测量精度,但其响应速率慢难以实现宽场热成像;以红外辐射等为代表的非接触式测温可实现芯片表面的快速热场测量,但测温精度较低、空间分辨率受到波长的限制。因此传统测温方法难以同时满足高精度、微纳米尺度的快速温度测量,亟需寻求新的测温技术。随着量子精密测温技术的发展,基于固态量子自旋效应的金刚石带负电的氮-空位(negatively charged nitrogen-vacancy,NV-)色心测温技术有望解决上述问题,突破现有微纳米尺度测温在芯片研制方面的应用瓶颈。鉴于此,首先综述对比了现有芯片用测温技术的特点和发展现状,而后调研分析了金刚石NV色心测温计量特性及小型化、集成化技术发展趋势,并展望了金刚石NV色心测温在芯片研制领域的技术优势和应用前景,提出其发展面临的挑战。

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	吴飞翔
	邢力
	冯晓娟
	张金涛
	孙坚

关键词 ：温度测量, 芯片研制, 金刚石NV色心, 微纳米尺度, 小型化

Abstract：The current temperature measurement technology is unable to meet the increasing performance demands of chips. Traditional contact temperature measurement methods such as thermocouple have high precision, but slow response rate, it is difficult to achieve wide field thermal imaging. Non-contact methods such as infrared radiation can achieve rapid thermal field measurement, but the accuracy is low and the wavelength is limited. The traditional temperature measurement methods are inadequate for achieving high precision, rapid temperature measurement at micro-nano scales. With the development of quantum precision temperature measurement technology, diamond negatively charged nitrogen-vacancy(NV-) center temperature measurement technology based on solid quantum spin effect is expected to solve the above problems, breaking through the existing micro-nano scale temperature measurement in the development of chip application bottleneck. In view of this, we first review the characteristics and development status of the existing chip temperature measurement technology, and then analyze the characteristics of diamond NV-center temperature measurement, miniaturization and integration technology trends. Finally, the technical advantages and application prospects in the field of chip development are prospected, and the challenges facing its development are put forward.

Key words： temperature measurement chip development NV-centers in diamond micro-nano meter scale miniaturization

收稿日期: 2024-04-23 发布日期: 2024-09-26

PACS:

TB942

基金资助:中国计量科学研究院重点领域基本科研业务费项目(AKYZD2209-1);中国博士后科学基金(2021M703049)

通讯作者: 邢力(1992-),山东济南人,中国计量科学研究院助理研究员,从事温度计量、金刚石NV色心测温/测磁、气体声学原级测温方法研究。Email:xingli@nim.ac.cn E-mail: xingli@nim.ac.cn

作者简介: 吴飞翔(1998-),安徽亳州人,中国计量大学硕士研究生,研究方向为金刚石NV色心测温激发激光稳定控制方法研究。Email:s22010811037@cjlu.edu.cn

引用本文:

吴飞翔,邢力,冯晓娟,张金涛,孙坚. 芯片研制用微纳米尺度温度测量方法及其展望[J]. 计量学报, 2024, 45(9): 1262-1272.
WU Feixiang,XING Li,FENG Xiaojuan,ZHANG Jintao,SUN Jian. The Methods and Prospects of Temperature Measurement for Chip Development in Micro-nano Meter Scale. Acta Metrologica Sinica, 2024, 45(9): 1262-1272.

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