新型量子霍尔电阻样品计量应用研究

doi:10.3969/j.issn.1000-1158.2020.04.015

摘要
图/表
参考文献
相关文章 (15)

全文: PDF (1059 KB) HTML (1 KB)
输出: BibTeX | EndNote (RIS)

摘要采用AsGa砷化镓系材料研制了多种结构的新型量子霍尔电阻样品,介绍了该样品的特点及应用领域。使用常温电流比较仪和低温电流比较仪,用过渡比对法对新型的量子霍尔电阻与标准量子霍尔电阻样品进行了双重测量比对验证,在实验室内测量结果的相对偏差小于4×10-8,验证了新型的量子霍尔电阻样品和测量系统的准确度满足当前计量应用需求。

	服务

	把本文推荐给朋友
	加入我的书架
	加入引用管理器
	E-mail Alert
	RSS
	作者相关文章
	蔡建臻
	黄晓钉
	潘攀

关键词 ：计量学, 量子霍尔电阻, 过渡比对法, 常温电流比较仪, 不确定度

Abstract：A new type Quantum Hall resistance (NQHR) sample of AsGa epitaxial wafer was developed. The NQHR sample has multi structures. The characters and application area were introduced. The NQHR sample was compared with standard Quantum Hall resistance(QHR) sample using transition comparison measurement method. In laboratory, the measured valve deviation between the two kinds of sample is less than 4×10-8. The experiment proved that the accuracy of NQHR sample and metrology system could satisfy the application of QHR Standard in resistance metrology.

Key words： metrology Quantum Hall resistance transition comparison measurement method room temperature DC current comparator uncertainty

收稿日期: 2019-05-19

PACS:

TB971

基金资助:国家国防科技工业局“十二五”技术基础项目(JSJL201403A009); 航天五院杰出青年人才基金

作者简介: 蔡建臻(1978-),男,吉林长春人,北京东方计量测试研究所高级工程师,博士,研究方向为电磁计量。

引用本文:

蔡建臻, 黄晓钉, 潘攀. 新型量子霍尔电阻样品计量应用研究[J]. 计量学报, 2020, 41(4): 484-488.
CAI Jian-zhen, HUANG Xiao-ding, PAN Pan. Research in Measurement and Application of New Type Quantum Hall Resistance Sample. Acta Metrologica Sinica, 2020, 41(4): 484-488.

链接本文:

http://jlxb.china-csm.org:81/Jwk_jlxb/CN/10.3969/j.issn.1000-1158.2020.04.015 或 http://jlxb.china-csm.org:81/Jwk_jlxb/CN/Y2020/V41/I4/484

1 JeckelmannB, JeanneretB. The quantum Hall effect as an electrical resistance standard[J]. Repports Progress in Physsics,2001, 64(8): 1603-1655.
2 钟源,贺青. 石墨烯在计量科学中的应用[J]. 计量学报,2011,32(3):285-288. ZhongY, HeQ. Application of Graphene in Metrology[J]. Acta Metrologica Sinica, 2011, 32(3): 285-288.
3 兰江,赵建亭,张钟华. 电阻电容电桥研究进展[J]. 计量学报,2011, 32(5): 407-412. LanJ, ZhaoJ T, ZhangZ H, et al. Progress in the Resistance and Capacitance Bridge[J]. Acta Metrologica Sinica, 2011, 32(5): 407-412.
4 SchopferF, PoirierW. Quantum resistance standard accuracy close to the zero-dissipation state[J]. Journal of Applied Physics, 2013, 114(6): 064508.
5 DelahayeF,JeckelmannB. Revised technical guidelines for reliable DC measurements of the quantized Hall resistance[J]. Metrologia, 2003, 40(5): 217-223.
6 钟青, 王雪深, 李劲劲,等. 1kΩ量子霍尔阵列电阻标准器件研制[J]. 物理学报, 2016, 65(22), 227301. ZhongQ, WangX Sn, LiJ J, et al. A 1kΩ standard resistor device based on quantum Hall array[J]. Acta Physica Sinica, 2016, 65( 22): 227301.
7 OrtolanoM, AbrateM, CallegaroL, On the synthesis of quantum Hall array resistance standards[J]. Metrologia, 2015, 52(1): 31-39.
8 WangX S, ZhongQ, LiJ J, et al. A study of quantum Hall devices withdifferent working magnetic fields forprimary resistance metrology[J]. Measurement Science & Technology, 2017, 28: 075005.
9 WangX S, ZhongQ , LiJ J, et al.Quantum Hall devices for the primary resistance standard based on the GaAs/AlxGa1-x As heterostructure[J]. International Journal of Modern Physics B, 2019,33(8): 1950057.
10 AhlersF J, G?tzM, PierzK. Direct comparison of fractional and integer quantized Hall resistances[J]. Metrologia , 2017, 54(4): 516-523.
11 MatthewsA J, KavokinK V, UsherA, et al. Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents[J]. Physical Review B, 2004, 70(7): 075317.