远程靶基距Nb/Al-AlOx/Nb约瑟夫森结薄膜溅射制备技术研究

doi:10.3969/j.issn.1000-1158.2023.09.03

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摘要高质量Nb/Al-AlOx/Nb三层膜制备是基于超导-绝缘-超导型(SIS)约瑟夫森结的量子电压标准芯片和超导量子干涉器件的关键工艺。针对远程靶基距直流磁控溅射工艺条件,研究溅射气氛和溅射功率对Nb、Nb/Al薄膜结构、形貌和电学性质的影响。Ar气流量20 mL/min,0.53Pa,600W制备的Nb膜的应力接近零压力,粗糙度仅为1.05nm,超导转变温度9.2K,剩余电阻比达到5.33。0.53Pa,450W制备的150nm Nb上10nm Al膜粗糙度仅为1.51nm,完全覆盖底层Nb膜。以此条件制备的Nb/Al-AlOx/Nb SIS结能隙电压达到2.6mV,表明远程溅射可以实现SIS结工艺所需高质量三层膜。

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	王振宇
	曾九孙
	高鹤
	王仕建
	徐达
	钟青
	李劲劲
	王雪深

关键词 ：计量学, Nb/Al-AlOx/Nb约瑟夫森结, 磁控溅射, 靶基距, 薄膜沉积

Abstract：The fabrication of high-quality Nb/Al-AlOx/Nb trilayer films is crucial for quantum voltage standard chips and superconducting quantum interference devices based on superconductor-insulator-superconductor (SIS) type Josephson junctions. The effects of sputtering atmosphere and sputtering power on the structure, morphology and electrical properties of Nb and Nb/Al films are investigated for remote target-based distance DC magnetron sputtering process. The Nb film prepared with a Ar flow rate of 20mL/min, 0.53Pa, and 600W shows a stress close to zero pressure, a roughness of only 1.05nm, a superconducting transition temperature of 9.2K, and a residual resistance ratio of 5.33. The roughness of the 10nm Al film on 150nm Nb prepared at 0.53Pa, 450W is only 1.51nm and completely covers the underlying Nb film. The energy gap voltage of the Nb/Al-AlOx/Nb SIS junction prepared by these conditions reaches 2.6mV, indicating that remote sputtering process can achieve high-quality trilayer films required for the SIS junction process.

Key words： metrology Nb/Al-AlOx/Nb josephson junction magnetron sputtering target-substrate distance thin film deposition

收稿日期: 2022-04-26 发布日期: 2023-09-21

PACS:

TB971

基金资助:国家自然科学基金青年科学基金 (62101522);国家市场监督管理总局科技计划 (2021MK154)

通讯作者: 王雪深(1984-),山东潍坊人,中国计量科学研究院副研究员,主要从事量子计量器件研究。Email:wangxs@nim.ac.cn E-mail: wangxs@nim.ac.cn

作者简介: 王振宇(1997-),浙江绍兴人,中国计量大学硕士研究生,研究方向为量子计量器件。Email:p20020854084@cjlu.edu.cn

引用本文:

王振宇,曾九孙,高鹤,王仕建,徐达,钟青,李劲劲,王雪深. 远程靶基距Nb/Al-AlOx/Nb约瑟夫森结薄膜溅射制备技术研究[J]. 计量学报, 2023, 44(9): 1333-1338.
WANG Zhen-yu,ZENG Jiu-sun,GAO He,WANG Shi-jian,XU Da,ZHONG Qing,LI Jin-jin,WANG Xue-shen. Fabrication of Nb/Al-AlOx/Nb Josephson Junction Films by a Sputtering Process with a Long Target-substrate Distance. Acta Metrologica Sinica, 2023, 44(9): 1333-1338.

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