|
|
The Development of the Infrared Spectral Emissivity Measurement of the Semi-transmittance Material |
ZANG Yan-zhe1,2,DONG Wei2,HUAN Ke-wei1,WANG Jin-hui2,YUAN Zun-dong2 |
1. Changchun University of Science and Technology, Changchun,Jinlin 130022, China
2. National Institute of Metrology, Beijing 100029 |
|
|
Abstract A special sample heater for the semi-transmittance material was constructed to extend the emissivity measurement ability, the temperature range covered 50~200 ℃ and the spectral range cover 3 to 14μm. A grating monochrometer to realize monochromatic spectrum, chopper to get alternating current signal, a digital signal processor lock-in amplifier in conjunction with HgCdTe detector to measure micro voltage signal. The model to measure the semi-transmittance material emissivity was established. A SiO2 glass sample was selected to study its spectral emissivity in the 8 to 14μm wavelength range at the temperature 80 ℃. The standard uncertainty of the emissivity is 0.08.
|
|
|
|
|
|
[1]奚同庚,王梅华. 固体热物理性质导论—理论和测量[M]. 北京:中国计量出版社,1987, 147-171.
[2]Hanssen L, Prokhorov A, Khromchenko V. Comparison of direct and indirect methods of spectral infrared emittance measurement[C]//TEMPMEKO2004, Dubrovnik, Croatia, 539-544.
[3]崔志尚, T Ricol. 光谱发射率测量技术的适用性[J]. 自动化仪表, 1990, 27(11): 7-8.
[4]原遵东,张俊祺,赵军,等. 材料光谱发射率精密测量装置[J].仪器仪表学报,2008,29(8):1659-1664.
[5]赵云龙,董伟,宦克为,等. 基于高温黑体的光纤光谱测试系统响应度标定研究[J].计量学报,2015,36(6A): 83-85.
|
|
|
|