Acta Metrologica Sinica  2013, Vol. 34 Issue (6): 617-622    DOI: 10.3969/j.issn.1000-1158.2013.06.22
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Key Comparison CCQM-K32 for Thickness Measurement of Ultrathin Silicon Oxides on Silicon Wafer
WANG Hai1,LIU Fen2,KAN Ying1,SONG Xiao-ping1,ZHAO Liang-zhong2,QIU Li-mei2
1. National Institute of Metrology, Beijing 100013, China;
2. Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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Abstract  Based on X-ray photoelectron spectroscopy technique, the National Institute of Metrology (NIM) of China developed an accurate analytical method and participated in the CCQM-32 international key comparison on thickness (less than 10 nm) measurement of ultrathin silicon oxides on silicon wafer.According to the published results of CCQM-K32, the NIM results with the expanded uncertainty of 4.6%~7.0% are agreed with the key comparison reference values and the degree of equivalence is gained.
Key wordsMetrology      Thickness measurement      Gate oxide      SiO2/S      Surface chemical analysis      X-ray photoelectron spectroscopy      Key comparison     
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WANG Hai
LIU Fen
KAN Ying
SONG Xiao-ping
ZHAO Liang-zhong
QIU Li-mei
Cite this article:   
WANG Hai,LIU Fen,KAN Ying, et al. Key Comparison CCQM-K32 for Thickness Measurement of Ultrathin Silicon Oxides on Silicon Wafer[J]. Acta Metrologica Sinica, 2013, 34(6): 617-622.
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http://jlxb.china-csm.org:81/Jwk_jlxb/EN/10.3969/j.issn.1000-1158.2013.06.22     OR     http://jlxb.china-csm.org:81/Jwk_jlxb/EN/Y2013/V34/I6/617
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