Development of A New Method for Millimeter-waveintrinsic On-wafer Measurements
WANG Yi-bang1,WU Ai-hua1,HUO Ye1,LIANG Fa-guo1,LUAN Peng1,LIU Chen1,DU Jing2
1. The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, Hebei 050051, China
2. Shijiazhuang Division of PLA Infantry Academy, Shijiazhuang, Hebei 050083, China
Abstract To proposes accurate method for millimeter-wave devices intrinsicscatter-parameters. For millimeter-wave circuit design, accurate simulation result is required. For this reason, an accurate measurement of de-embedding is a key technique for device characterization, and is also important. In this work, a new model based on conventional open-short de-embedding method and corresponding solutionalgorithm are proposed. By adding transmission line with open and short standards to gain approximate ideal open and short, and at the same time, consummate the model with crosstalk which grows larger with increasing frequency.Considering the complex solution with crosstalk, the new model could eliminate the crosstalk influence on device under test avoiding knowing it. Calibration kits and device under test were also fabricated and measured. 110GHz Passive device was measured subject to both new method here and second tier crosstalk calibrations proposed by NIST. Measurement results demonstrate that new method is capable of eliminating the cross-talk and PAD more accurately with an improvement S;21 magnitude of 1.3dB, and show a promising result with NIST. A serial of active pHEMT test results also showed that, the new method was more accurate at device maxgain.
WANG Yi-bang,WU Ai-hua,HUO Ye, et al. Development of A New Method for Millimeter-waveintrinsic On-wafer Measurements[J]. Acta Metrologica Sinica, 2022, 43(3): 293-298.
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2022, Vol. 43 
