Investigation into Definition Method for On-wafer 16-term Error Model Calibration Kits Below 110GHz
WANG Yi-bang1,ZHOU Rui1,CHEN Ting2,WU Ai-hua1,LIU Chen1,LIANG Fa-guo1
1. The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, Hebei 050051, China
2. Beijing Microwave Metrology and Measurement Institute, Beijing 130022, China
Abstract The conventional lumped parameter circuit model has been widely used in the definition of calibration kits for on-wafer probing. However, the accuracy of the defined model parameter is not great, due to the non-ideal circuit model and fitting algorithm used in extracting circuit parameters. A more accurate definition method is presented for 16-term calibration kits that is designed to correct the crosstalk at high frequencies. The new definition method is based on measurements of fabricated assistant multiline TRL calibration kits and full-wave simulations. The measurement system corrected by such defined 16-term calibration kits was compared with two-tier calibration method of Multiline TRL proposed by NIST. The results shows excellent agreement between these two techniques, i.e. the difference in transmission magnitude is within 0.30dB and the phase is within 1.0°. The proposed definition method offers appealing advantages over the NIST technique, in terms of smaller number of standards required and fewer movements of probes.
WANG Yi-bang,ZHOU Rui,CHEN Ting, et al. Investigation into Definition Method for On-wafer 16-term Error Model Calibration Kits Below 110GHz[J]. Acta Metrologica Sinica, 2021, 42(3): 365-369.
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2021, Vol. 42 
