Acta Metrologica Sinica  2021, Vol. 42 Issue (1): 35-40    DOI: 10.3969/j.issn.1000-1158.2021.01.06
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Influence of Emissivity of Infrared Thermal Results of Semiconductor Device
HAN Wei,LIU Yan,DU Lei,ZHENG Shi-qi,ZHAI Yu-wei,LIANG Fa-guo
The 13th Research Institute of CETC, Shijiazhuang, Hebei 050051, China
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Abstract  To confirm the influence of the lower emissivity of the semiconductor device on the microscopic infrared temperature measurement results, a series of verification experiments was carried out using the developed semiconductor materials and metal material targets, and the effect why the emissivity affects the accuracy of micro-infrared thermography was analyzed. The semiconductor material target with platinum resistance structure, GaAs and Au, were developed. The black body and the developed two targets were tested at different temperatures using micro-thermal infrared spectroscopy. The temperature deviations of the three materials are 1.9℃, 3.7℃, and 7.9℃ at a temperature of 110℃, the test results show that the lower the material emissivity, the greater the temperature measurement error, and the error increases with the increase of the temperature. So, it is necessary to consider the influence of emissivity when using micro-infrared camera to measure the temperature of the semiconductor devices.
Key wordsmetrology      emissivity      semiconductor device      infrared microscopic thermographic      target     
Received: 14 August 2019      Published: 19 January 2021
PACS:  TB942  
  TB973  
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HAN Wei
LIU Yan
DU Lei
ZHENG Shi-qi
ZHAI Yu-wei
LIANG Fa-guo
Cite this article:   
HAN Wei,LIU Yan,DU Lei, et al. Influence of Emissivity of Infrared Thermal Results of Semiconductor Device[J]. Acta Metrologica Sinica, 2021, 42(1): 35-40.
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http://jlxb.china-csm.org:81/Jwk_jlxb/EN/10.3969/j.issn.1000-1158.2021.01.06     OR     http://jlxb.china-csm.org:81/Jwk_jlxb/EN/Y2021/V42/I1/35
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