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Research in Measurement and Application of New Type Quantum Hall Resistance Sample |
CAI Jian-zhen, HUANG Xiao-ding, PAN Pan |
Beijing Orient Institute of Measurement and Test, Beijing, 100086, China |
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Abstract A new type Quantum Hall resistance (NQHR) sample of AsGa epitaxial wafer was developed. The NQHR sample has multi structures. The characters and application area were introduced. The NQHR sample was compared with standard Quantum Hall resistance(QHR) sample using transition comparison measurement method. In laboratory, the measured valve deviation between the two kinds of sample is less than 4×10-8. The experiment proved that the accuracy of NQHR sample and metrology system could satisfy the application of QHR Standard in resistance metrology.
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Received: 19 May 2019
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Corresponding Authors:
Email:caijianzhen@cast514.com
E-mail: caijianzhen@cast514.com
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1 JeckelmannB, JeanneretB. The quantum Hall effect as an electrical resistance standard[J]. Repports Progress in Physsics,2001, 64(8): 1603-1655.
2 钟源,贺青. 石墨烯在计量科学中的应用[J]. 计量学报,2011,32(3):285-288. ZhongY, HeQ. Application of Graphene in Metrology[J]. Acta Metrologica Sinica, 2011, 32(3): 285-288.
3 兰江,赵建亭,张钟华. 电阻电容电桥研究进展[J]. 计量学报,2011, 32(5): 407-412. LanJ, ZhaoJ T, ZhangZ H, et al. Progress in the Resistance and Capacitance Bridge[J]. Acta Metrologica Sinica, 2011, 32(5): 407-412.
4 SchopferF, PoirierW. Quantum resistance standard accuracy close to the zero-dissipation state[J]. Journal of Applied Physics, 2013, 114(6): 064508.
5 DelahayeF,JeckelmannB. Revised technical guidelines for reliable DC measurements of the quantized Hall resistance[J]. Metrologia, 2003, 40(5): 217-223.
6 钟青, 王雪深, 李劲劲,等. 1kΩ量子霍尔阵列电阻标准器件研制[J]. 物理学报, 2016, 65(22), 227301. ZhongQ, WangX Sn, LiJ J, et al. A 1kΩ standard resistor device based on quantum Hall array[J]. Acta Physica Sinica, 2016, 65( 22): 227301.
7 OrtolanoM, AbrateM, CallegaroL, On the synthesis of quantum Hall array resistance standards[J]. Metrologia, 2015, 52(1): 31-39.
8 WangX S, ZhongQ, LiJ J, et al. A study of quantum Hall devices withdifferent working magnetic fields forprimary resistance metrology[J]. Measurement Science & Technology, 2017, 28: 075005.
9 WangX S, ZhongQ , LiJ J, et al.Quantum Hall devices for the primary resistance standard based on the GaAs/AlxGa1-x As heterostructure[J]. International Journal of Modern Physics B, 2019,33(8): 1950057.
10 AhlersF J, G?tzM, PierzK. Direct comparison of fractional and integer quantized Hall resistances[J]. Metrologia , 2017, 54(4): 516-523.
11 MatthewsA J, KavokinK V, UsherA, et al. Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents[J]. Physical Review B, 2004, 70(7): 075317. |
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