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| Study on the Realization of Gallium Melting Point Plateau |
| LI Li-feng1,2, LI Rui1, YAN Xiao-ke2, WANG Ning2, HE Pei3 |
1.Beijing University of Civil Engineering and Architecture, Beijing 100044, China
2.National Institute of Metrology, Beijing 100029, China
3.University of Science & Technology Beijing, Beijing 100083, China |
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Abstract The gallium melting point is an important defining fixed point in the International Temperature Scale of 1990 (ITS-90) and plays a crucial role in temperature measurement researche. When the phase transition of the high-purity gallium from the liquid state to the solid state happens, the volume expansion is about 3.1%, which can result in the rupture of the conventional glass container of the gallium point cells during the freezing process. In order to solve this problem, a gallium melting point device was developed with a metal shell. Effects of realization methods and devices on the gallium melting plateaus were carried out. At the same time, a comparison was conducted between a similar foreign device and the developed cell. The experimental results showed that the temperature difference of the temperatures of the gallium melting point was consistent within of 0.02 mK, which may be attributed to the trace impurities in high-purity gallium samples. The temperature of gallium melting point realized with the outer liquid-solid interface method was 0.09 mK lower than that of the temperature obtained by the two-liquid-solid interface method. Effects of the realization apparatus on the gallium melting plateaus were small.
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Received: 22 August 2019
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2020, Vol. 41 
