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Establish of Spectroscopic Ellipsometry Model of Nanoscale HfO2 Thin Films |
ZHANG Yin-hui1,2,REN Ling-ling2,GAO Hui-fang2,JIA Ya-bin1,2,Fu Weien3,LIU Xiao-ping1,Kim Changsoo4,Yasushi Azuma5 |
1. Taiyuan University of Technology, Taiyuan, Shanxi 030024, China
2. National Institute of Metrology, Beijing 100029, China
3. Industrial Technology Research Institute, Hsinchu 30011, China
4. Korea Research Institute of Standards and Science,Daedeok 305-340, Korea
5. National Metrology Institute of Japan,Tsukuba 305-8565, Japan |
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Abstract In order to establish a reliable thickness-measuring fitting model for approximate 1 nm thickness HfO2 film using spectroscopic ellipsometry, the thickness of a ultrathin HfO2 film was measured by a grazing incidence X-ray reflection diffractometer, which belongs to a part of country / region interlaboratory comparison and it used as the reference value of ellipsometry model thickness. It investigated the selected dispersion model and fitting parameters of HfO2 film. The results show that the optimized fitting conditions are obtained, and Tauc-Lorentz 3 for the dispersion model is selected with wavelength ranging from 3.45 eV to 4.35 eV and the ratio of the HfO2 to porosity equals 60:40.
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Received: 04 February 2017
Published: 11 August 2017
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