Effects of Incident Angle Deviation on Film Thickness Measurement Using Extinction Ellipsometry

DU Chenhuo, ZHANG Shu, HU Jiacheng, PI Lei, SHI Yushi

Acta Metrologica Sinica ›› 2026, Vol. 47 ›› Issue (4) : 475-481.

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Acta Metrologica Sinica ›› 2026, Vol. 47 ›› Issue (4) : 475-481. DOI: 10.3969/j.issn.1000-1158.2026.04.01

Effects of Incident Angle Deviation on Film Thickness Measurement Using Extinction Ellipsometry

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Abstract

In the measurement of film thickness by extinction ellipsometry, the angle of incidence, as an important process parameter that changes the polarization states of incident and reflected light waves, significantly affects the accuracy of film thickness measurements. A He-Ne laser with a wavelength of 632.8 nm is used to establish a mathematical model between incident angle deviation and measured film thickness deviation under different incident angles. The model is verified by constructing an extinction ellipsometry setup and testing a silica-on-silicon sample. For the measured sample with a film thickness of 102.55 nm, theoretical calculations show that every 0.01° variation in the incident angle introduces a maximum error of 0.008 7 nm to the measured film thickness. Measurement results demonstrate that the actual error caused by incident angle deviation is consistent with model expectations, which further validates the reliability of the extinction ellipsometry setup. The analysis method for the uncertainty component introduced by incident angle deviation in extinction ellipsometry is optimized. The uncertainty component introduced by the incident angle of the setup is 0.004 nm.

Key words

nanometrology / extinction ellipsometry / film thickness / error analysis / incident angle deviation

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DU Chenhuo , ZHANG Shu , HU Jiacheng , et al . Effects of Incident Angle Deviation on Film Thickness Measurement Using Extinction Ellipsometry[J]. Acta Metrologica Sinica. 2026, 47(4): 475-481 https://doi.org/10.3969/j.issn.1000-1158.2026.04.01

References

[1]
施玉书, 张树, 连笑怡,等. 毫米级纳米几何特征尺寸计量标准装置多自由度激光干涉计量系统[J]. 计量学报202041(7): 769-774.
SHI Y S ZHANG S LIAN X Y, et al. Multi‑DOF Laser Interferometry System for Metrological Standard Device for Nano‑geometrical Characteristic Size in Millimeter Range[J]. Acta Metrologica Sinica202041(7): 769-774.
[2]
张树, 施玉书, 高思田,等. 计量型白光干涉显微镜干涉图像处理技术[J]. 计量学报201738(z1): 80-84.
ZHANG S SHI Y S GAO S T, et al. Interference Images Processing in Metrological White‑light Interferometry Microscope[J]. Acta Metrologica Sinica201738(z1): 80-84.
[3]
陆华, 李扬武, 岳增记,等. 椭偏法测量拓扑绝缘体的复折射率[J]. 物理实验202141(1): 22-26.
LU H LI Y W YUE Z J, et al. Ellipsometry measurement of complex refractive index of topological insulators[J]. Physical experiment202141(1): 22-26.
[4]
陈超. 高分辨层析成像穆勒矩阵椭偏仪研制与应用研究[D]. 武汉:华中科技大学, 2021.
[5]
黎雄威, 李琪, 纪峰,等. 计量型激光椭偏仪初始入射角校准方法的研究[J]. 计量学报202243(5): 571-577.
LI X W LI Q JI F, et al. Research on Calibration Method of Initial Incident Angle of Metrological Laser Ellipsometer[J]. Acta Metrologica Sinica202243(5): 571-577.
[6]
张金旭, 陈家扬,吴冠豪. 基于光谱干涉椭偏法的薄膜厚度测量[J]. 计测技术202343(1): 122-127.
ZHANG J X CHEN J Y WU G H, et al. Thickness measurement of thin films based on spectral interference ellipsometry[J]. Metrology & Measurement Technology202343(1): 122-127.
[7]
JIN L H MOGI S MURANAKA T,et al. Characterization of thin films from reflection and transmission ellipsometric parameters[J].Japanese journal of applied physics202261(1):018004.
[8]
ACHER O BIGAN E DREVILLON B. Improvements of phase‑modulated ellipsometry[J].Review of Scientific Instruments198960(1):65-77.
[9]
杜黎明, 管钰晴, 孔明,等. 基于穆勒椭偏的纳米薄膜厚度测量与溯源[J]. 微纳电子技术202158(12): 1121-1127.
DU L M GUAN Y Q KONG M,et al. Measurement and traceability of nanofilm thickness based on Mueller ellipsometry[J]. Micronanoelectronic Technology202158(12): 1121-1127.
[10]
GUTIERREZ Y ESPINOZA S ZAHRADNIK M, et al. Characterizing Optical Phase‑Change Materials with Spectroscopic Ellipsometry and Polarimetry[J].Thin Solid Films2022763:139580.
[11]
谷洪刚, 柯贤华, 丁可,等. 先进光谱椭偏测量技术及其在OLED中的应用[J]. 微纳电子与智能制造20202(2): 41-62.
GU H G KE X H DING K, et al. Advanced spectroscopic ellipsometry and its application to OLEDs[J]. Micro/nano Electronics and Intelligent Manufacturing20202(2): 41-62.
[12]
刘政杰, 薛鹏, 陈媛媛,等. 单电机驱动广义椭偏仪变角结构设计与实现[J]. 应用光学202344(3): 507-512.
LIU Z J XUE P CHEN Y Y, et al. Design and implementation of variable angle mechanism of generalized ellipsometer driven by single motor[J]. Journal of Applied Optics202344(3): 507-512.
[13]
张宝武, 孔明, 许新科,等. 物理光学中多光束叠加强度求解方法的探讨[J]. 物理与工程202434(2): 98-103.
ZHANG B W KONG M XU X K, et al. Discussion on The Method of Solution to Multi‑beam Superposition Intensity in Physical Optics[J]. Physics and Engineering202434(2): 98-103.
[14]
陈燕平,余飞鸿. 薄膜厚度和光学常数的主要测试方法[J]. 光学仪器200628(6): 84-88.
CHEN Y P YU F H. Test methods for film thickness and optical constants[J]. Optical Instruments200628(6): 84-88.
[15]
盛宇. 基于广义薄层边界条件的人工电磁表面参数化建模方法研究[D]. 北京:北京交通大学, 2023.
[16]
黎雄威. 纳米膜厚椭偏计量方法及装置的研究[D]. 合肥:合肥工业大学, 2021.
[17]
崔长彩,李慧慧,陈希,等.蓝宝石衬底损伤层厚度和折射率的椭偏测量[J].仪器仪表学报202344(7):37-43.
CUI C C LI H H CHEN X, et al. Ellipsometry measurement of damage layer thickness and refractive index on sapphire substrate[J]. Chinese Journal of Scientific Instrument202344(7):37-43.
[18]
张寅辉,任玲玲,高慧芳,等.纳米尺度HfO2薄膜的光谱椭偏模型建立[J].计量学报201738(5):548-552.
ZHANG Y H REN L L GAO H F, et al. Spectroscopic ellipsometry modeling of nanoscale HfO2 thin films[J]. Acta Metrologica Sinica201738(5):548-552.
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