发射率对半导体器件显微红外测温结果的影响

doi:10.3969/j.issn.1000-1158.2021.01.06

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Abstract To confirm the influence of the lower emissivity of the semiconductor device on the microscopic infrared temperature measurement results, a series of verification experiments was carried out using the developed semiconductor materials and metal material targets, and the effect why the emissivity affects the accuracy of micro-infrared thermography was analyzed. The semiconductor material target with platinum resistance structure, GaAs and Au, were developed. The black body and the developed two targets were tested at different temperatures using micro-thermal infrared spectroscopy. The temperature deviations of the three materials are 1.9℃, 3.7℃, and 7.9℃ at a temperature of 110℃, the test results show that the lower the material emissivity, the greater the temperature measurement error, and the error increases with the increase of the temperature. So, it is necessary to consider the influence of emissivity when using micro-infrared camera to measure the temperature of the semiconductor devices.

Key words： metrology emissivity semiconductor device infrared microscopic thermographic target

Received: 14 August 2019 Published: 19 January 2021

PACS:	TB942
	TB973

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	Articles by authors
	HAN Wei
	LIU Yan
	DU Lei
	ZHENG Shi-qi
	ZHAI Yu-wei
	LIANG Fa-guo

Cite this article:

HAN Wei,LIU Yan,DU Lei, et al. Influence of Emissivity of Infrared Thermal Results of Semiconductor Device[J]. Acta Metrologica Sinica, 2021, 42(1): 35-40.

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http://jlxb.china-csm.org:81/Jwk_jlxb/EN/10.3969/j.issn.1000-1158.2021.01.06 OR http://jlxb.china-csm.org:81/Jwk_jlxb/EN/Y2021/V42/I1/35

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