1.National Institute of Metrology, Beijing 100029, China
2.School of Instrumentation Science and Opto Electronics Engineering, Beijing Information Science and Technology University, Beijing 100192, China
Abstract:An antireflective layer should be fabricated on the surface of Nb film which was used as the photon energy detection unit in the single photon standard.The spectral refractive index characteristics of Nb films with different thickness made by a magnetron sputter system, SiO2 and SiNx films made by a plasma enhanced chemical vapor deposition system were studied.To reduce the reflection ratio of the superconducting Nb film at 633 nm, the structure of the SiO2/Nb and SiNx/Nb structure were designed and fabricated.The reflectivity was effectively reduced,which was verified by the results of the calculation.
[1]尤立星.超薄超导材料特性及应用[J].稀有金属材料与工程,2008,37(Z4):373-376.
You L X.Properties and Applications of ultrathin superconducting materials[J].Rare Metal Materials and Engineering,2008,37(Z4):373-376.
[2]Dorenbos S N,Forn-Diaz P,Fuse T,et al. Low gap superconducting single photon detectors for infrared sensitivity[J].Applied Physics Letters,2011,98:251102
[3]Schuck C,Pernice W H P,Tang H X. Waveguide integrated low noise NbTiN nanowire single-photon detectors with milli-Hz dark count rate[J].Scientific Reports,2013,3(5):1893.
[4]Verma V B,Marsili F,Baek B,et al. 55% system detection efficiency with self-aligned WSi superconducting nanowire single-photon detectors[C]//Conference on Lasers and Electro-Optics (CLEO).USA, 2012:102.
[5]孙继红,章斌,徐耀,等.SiO2光学增透膜的制备及光学性能[J].光学技术,2000,26(2):104-106.
Sun J H,Zhang B,Xu Y,et al. Preparation and optical properties of SiO2 AR coating[J].Optical Technique,2000,26(2):104-106.
[6]宋学萍,黄飞,吕建国,等.射频磁控溅射制备SiO2薄膜及性能表征[J].安徽大学学报(自然科学版),2010,34(6):37-42.
Song X P,Huang F,Lü J G,et al. Preparation and characterization of SiO2 thin films by RF magnetron sputtering[J].Journal of Anhui University (Natural Science Edition),2010,34(6):37-42.
[7]徐成.射频磁控溅射制备SiO2薄膜及其性能研究[D].大连:大连理工大学,2017.
[8]金桂,周继承.射频磁控溅射SiO2薄膜的制备与性能研究[J].武汉理工大学学报,2006,28(8):12-15.
Jin G,Zhou J C. Fabrication and Properties of Silicon Dioxide Film Prepared by RF Magnetron Sputtering[J].Journal of Wuhan University of Technology,2006,28(8):12-15.
[9]黄燕超.PECVD法制备SiO2增透减反涂层的研究[D].大连:大连交通大学,2014.
[10]胡九龙.PECVD技术制备超宽带增透膜[D].西安:西安工业大学,2013.
[11]林永昌,卢维强.光学薄膜原理[M].北京:国防工业出版社,1990.