超导Nb膜表面减反膜技术研究

doi:10.3969/j.issn.1000-1158.2019.01.12

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摘要针对单光子探测芯片中超导Nb膜减反的问题,研究了磁控溅射Nb膜折射率光谱特性随Nb膜厚度变化的规律,同时研究了化学气相沉积法制备的SiO₂和SiN_x介质膜的折射率光谱特性。为降低超导Nb膜对633 nm光的反射比,在Nb膜表面设计和制备了SiO₂和SiN_x减反膜。测试结果表明:SiO₂和SiN_x使反射比明显减小,计算结果验证了这一趋势。

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	钟青
	刘文德
	马晓欢
	王君
	郑春弟
	王雪深
	李劲劲

关键词 ：计量学, 减反膜, 超导Nb膜, 介质膜, 单光子探测芯片

Abstract：An antireflective layer should be fabricated on the surface of Nb film which was used as the photon energy detection unit in the single photon standard.The spectral refractive index characteristics of Nb films with different thickness made by a magnetron sputter system, SiO₂ and SiN_x films made by a plasma enhanced chemical vapor deposition system were studied.To reduce the reflection ratio of the superconducting Nb film at 633 nm, the structure of the SiO₂/Nb and SiN_x/Nb structure were designed and fabricated.The reflectivity was effectively reduced,which was verified by the results of the calculation.

Key words： metrology antireflective layer superconducting Nb film dielectric film single photon detection chip

收稿日期: 2018-05-16 发布日期: 2019-01-07

PACS:

TB96

基金资助:国家重点研发计划(2017YFF0206105);国家自然科学基金(61701470);北京信息科技大学2017-2018年度“实培计划”

通讯作者: 王雪深 E-mail: wangxs@nim.ac.cn

作者简介: 钟青(1964-),女,北京人,中国计量科学研究院副研究员,硕士,主要从事计量用量子芯片研究工作。Email:zhongq@nim.ac.cn

引用本文:

钟青,刘文德,马晓欢,王君,郑春弟,王雪深,李劲劲. 超导Nb膜表面减反膜技术研究[J]. 计量学报, 2019, 40(1): 78-81.
ZHONG Qing,LIU Wen-de,MA Xiao-huan,WANG Jun,ZHENG Chun-di,WANG Xue-shen,LI Jin-jin. Study on Antireflective Layer above Superconducting Nb Films. Acta Metrologica Sinica, 2019, 40(1): 78-81.

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http://jlxb.china-csm.org:81/Jwk_jlxb/CN/10.3969/j.issn.1000-1158.2019.01.12 或 http://jlxb.china-csm.org:81/Jwk_jlxb/CN/Y2019/V40/I1/78