基于等效面积法的线宽及线宽粗糙度测量

李洪波,赵学增,赵维谦

计量学报 ›› 2011, Vol. 32 ›› Issue (1) : 16-19.

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PDF(628 KB)
计量学报 ›› 2011, Vol. 32 ›› Issue (1) : 16-19. DOI: 10.3969/j.issn.1000-1158.2011.01.04

基于等效面积法的线宽及线宽粗糙度测量

  • 李洪波1,2,赵学增3,赵维谦1
作者信息 +

Measurement of Line-width and Line-width Roughness Based on Equivalent Area

  • LI Hong-bo1,2,ZHAO Xue-zeng2,ZHAO Wei-qian1
Author information +
文章历史 +

摘要

建立一种基于刻线边缘轮廓特征求取刻线线宽和线宽粗糙度的测量方法。理想情况下,刻线线宽方向截面为矩形,面积为该矩形高度和宽度的乘积。实际测量中,沿刻线线宽方向截面为一多边形,认为该多边形面积S1和理想矩形面积S相等。利用Tsai给出的台阶高度算法计算刻线单扫描轮廓的高度以获得线宽截面高度H。刻线等效宽度We可根据上述高度H和截面面积S1求出。线宽粗糙度定义为线宽变化的3倍标准偏差,因此线宽粗糙度也能用该方法求出。

Abstract

A method to measure line-width and line-width roughness (LWR) is presented based on the outline feature of the step scanned by AFM. Ideally, the step cross-section along the direction of the line-width is rectangle, whose area, S, is the product of height and line-width. Actually, the outline of the step cross-section is polygonal, whose area, S1, is equaled to S. The height of the profile scanned by AFM, H, is calculated by improving Tsai’s height algorithm. So, line-with, We, is calculated according to S1 and H. LWR is also calculated according to its definition as the 3σ value of line-width variation.

关键词

计量学 / 原子力显微镜 / 线宽 / 线宽粗糙度 / 等效面积

Key words

Metrology / Atomic force microscope / Linewidth / Linewidth roughness / Equivalent area

引用本文

导出引用
李洪波,赵学增,赵维谦. 基于等效面积法的线宽及线宽粗糙度测量[J]. 计量学报. 2011, 32(1): 16-19 https://doi.org/10.3969/j.issn.1000-1158.2011.01.04
LI Hong-bo1,2,ZHAO Xue-zeng2,ZHAO Wei-qian1. Measurement of Line-width and Line-width Roughness Based on Equivalent Area[J]. Acta Metrologica Sinica. 2011, 32(1): 16-19 https://doi.org/10.3969/j.issn.1000-1158.2011.01.04
中图分类号: TB921   

参考文献

[1]ITRS. Metrology 2007[EB/OL]. http://www.itrs.net/Links/2007ITRS/2007_Chapters/2007_Metrology.pdf.
[2]Cramer H,Kiers T,Vanoppen P,et al.Total test repeatability,a new figure of merit for CD metrology tools[C]//SPIE. SPIE Microlithgraphy Conference 2003, Santa Clara,  2004, 5375(1): 1254-1264.
[3]Yamaguchi A, Steffen R, Kawada H, et al. A discussion on how to define the tolerance for line-edge or linewidth roughness and its measurement methodology [J].  IEEE Transactions on Semiconductor Manufacturing, 2007, 20(4):549-555.
[4]Thiault J, Foucher J, Tortal J H, et al. Line edge roughness characterization with a three-dimensional atomic force microscope: Transfer during gate patterning processes [J]. J  Vac  Sci  Technol,  2005, B23(6): 3075-3079.
[5]Orji N G, Vorburger T V, Fu J, et al. Line edge roughness metrology using atomic force microscopes [J]. Meas Sci Technol, 2005, (16): 2147–2154.
[6]赵学增, 褚巍, Theodore T V, 等. 基于AFM的纳米尺度线宽计量模型及其算法的研究[J]. 机械工程学报, 2004, 40(4): 50-57.
[7]徐毅,高思田,李晶. 纳米、亚微米标准样板及SPM量值溯源[J].计量学报, 2003,24(2):81~84.
[8]王凌,赵学增,褚巍,等.一个基于直方图的纳米尺度线宽计算模型[J].计量技术, 2004, (3):3-6.
[9]Tsai V W. Calibration of atomic force microscopes with silicon atomic step artifact [D]. College Park : University of Maryland, 1998.
[10]李洪波, 赵学增. 基于AFM的刻线线宽粗糙度的测量[J].机械工程学报, 2008, 45(8): 222-227.

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